pmc singwore 1 silicon npn triple diffused type 1 power aww3fer m?plxcations. j?eatures: . complementary totsc328i g recommend for 100 w high fide+ audio frequency knplifier output stage. f4aximuh ratings (ta=2sc) mracterxstic sy?fbol uting unit 1 1 collector-3ase voleaqe vc30 -200 ! v , , collector-znic~zr voleage vceo 1 -200 ! vi emitter-3ase volcage i ve30 i -5 ) v / collector current ic -l5 a i 3ase current qi -1.5 a c # .-- / collector power dissipation ?c 150 w '(tc*zsc). 'junction temperacure tj 150 i uc ( storage temperature xange i htg -jj- 150 1 oc 1 1 2sa1302 unit in. m i3de.c ,. iv e ig i; c : 9.75g electrical characteristics (ta=?z'c) (' cxaracte~ist~c syxbol ? test condition ?i hii. e?.i mx. iuxit 1 4 i icollect0r cut-off current icbo vc3 =-2oov, ie--0 i_ _ -5.0? ua ! iemitter cut-off currenr xi30 veb =-jv, xc=0 - -5.0 iia i collector-hitter ibreakdown voltage v(br)cc,o ic=-joma, ib'o -200 - - v ? i hfe(l) vcp-5v, tc=-la 55 - 160 (note) dc current gain , hfe(2) vce'-sv, 1c'-8a 3s 60 - i collector-emitter vce(sat) ic*-loa, tb=-1a - -1.5 -3.0 v saturation voltage base-hitter voltage vbe vce=gv, it-8a .i -1.0 -1.5 v 1 transition frequency ft vce--~v, ic--1a 25 - mhz collector output capacitance cob vcb'-lov, ie-0, f=lmhz - 170 - 1 pf l
pmc singwore 1 silicon npn triple diffused type 1 2sal302 xc - ke fc - 93e 25 -25 co l -a5 -lo -l5 -20 -25 base-eliittels voltage vbe (v) -io -i2 cc~,j.~xor-emittzr voltaoe vce ('~1 "ce(sat), - ic h-- - ir cj ? ccmmon emitter ,n ,a3 -al -a5 -1 -3 -lo -30 collector current xc (a) -003 -al -a3 -1 -3 -10 -xl collector current ic (a) safe o?peratino area ft - ic -1 4l5 curve3 must bedgrated -a3 line a rly wite increase s intemperature 0 -a1 -q3 -1' -3 -100 -300 -1m 3 ? ? ? ? 1?? ? ? ? ? ??1 ? 1 ? ??u -a1 -a3 -1 -3 -lo -30 -1co 3 collector currelit xc (a) collector-!!xitter voltage vce (v)
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